Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes-Reference-Cited by-同舟云学术

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Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes

Published:2011-11 Issue:22 Volume:406 Page:4300-4303
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Wang Yu-Shou,Chen Nai-Chuan,Lu Chun-Yi,Chen Jenn-Fang

Funder

National Science Council of the Republic of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

3. Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

4. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

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1. Optoelectronic properties, stability, and thermodynamic properties of 2D XSn2N4 (X = Cr, Mo, W) monolayers;Physica B: Condensed Matter;2024-07

2. Concentration sensing system with monolithic InGaN/GaN photonic chips;Chinese Optics Letters;2024

3. Light Emitting Diode with Multi-step Quantum Well Structure for Sensing Applications;JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY;2023-11-30

4. Influence of a magnetic field and temperature on the oscillations of the combined density of states in two-dimensional semiconductor materials;Indian Journal of Physics;2023-07-09

5. Determination of the dependence of the two-dimensional combined density of states on external factors in quantum-dimensional heterostructures;Modern Physics Letters B;2023-03-08

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