Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method-Reference-Cited by-同舟云学术

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Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method

Published:2012-08 Issue:15 Volume:407 Page:2932-2934
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Yonenaga Ichiro,Taishi Toshinori,Ise Hideaki,Murao Yu,Inoue Kaihei,Ohsawa Takayuki,Tokumoto Yuki,Ohno Yutaka,Hashimoto Yoshio

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers

2. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

3. Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt

4. Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

5. Impurity effects on the generation and velocity of dislocations in Ge

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interaction between gaseous oxygen and germanium melt;Russian Journal of Inorganic Chemistry;2016-03

2. Oxygen Impurity in Germanium Single Crystals Determination by Infrared Spectrometry;Advanced Materials Research;2015-04

3. Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide;Acta Physica Polonica A;2013-08

4. Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies;Journal of Applied Physics;2013-02-21

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