Impurity effects on optical property of a spherical quantum dot in the presence of an electric field
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Electronic impurity levels in semiconductors
2. Hydrogenic impurity states in a quantum well: A simple model
3. Hydrogenic impurity states in quantum-well wires
4. Hydrogenic impurity states in quantum-well wires: Shape effects
5. Confined electron and hydrogenic donor states in a spherical quantum dot of GaAs-Ga1−xAlxAs
Cited by 118 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of the electric field orientation on stark shift, dipole moment and electronic properties in a circular toroidal quantum ring: Presence of shallow donor impurity;Physica B: Condensed Matter;2024-10
2. Optical properties of a quantum dot confined in inverse square root truncated exponential potential under varied conditions of temperature, hydrostatic pressure, and electric/magnetic fields;The European Physical Journal Plus;2024-08-10
3. Impact of combined electric and magnetic fields on the physical properties of GaAs variant quantum ring quarter cross-section in presence of an off-center shallow donor impurity;Journal of Magnetism and Magnetic Materials;2024-08
4. The role of geometry in tailoring the linear and nonlinear optical properties of semiconductor quantum dots;Nanophotonics X;2024-06-18
5. Effects of surface curvature and electric field on electronic and optical properties of an off-center hydrogenic donor impurity in 2D nanostructures;The European Physical Journal Plus;2024-05-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3