First-principles study of thiophene on β-SiC (001)-(2×1) surface
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Prospects for SiC electronics and sensors
2. Silicon Carbide Power Devices;Baliga,2006
3. Physical properties of cubic SiC(001) surfaces from first-principles simulations
4. Current state-of-the-art and future prospects for power semiconductor devices in power transmission and distribution applications
5. Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
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1. First-principle studies of radioactive fission productions of Cs/Sr/Ag/I adsorption on silicon carbide in HTGR;Progress in Nuclear Energy;2017-09
2. Adsorption Behaviors of Cobalt on the Graphite and SiC Surface: A First-Principles Study;Science and Technology of Nuclear Installations;2017
3. Adsorption of 2-vinyl thiophene on Si(100)2 × 1: A van Der Waals corrected DFT study;Journal of Theoretical and Computational Chemistry;2015-03
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