Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. The effects of pressure and barrier height on donor binding energy in GaAs/Ga1−xAlxAs cylindrical quantum well wires
2. Stark Effect Dependence on Hydrogenic Impurities in GaAs Parabolic Quantum-Well Wires
3. Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling of the Stark shift and binding energy of shallow donor-impurity in $$\mathrm{GaAs}/{\mathrm{Al}}_{0.3}{\mathrm{Ga}}_{0.7}\mathrm{As}$$ core/shell quantum disk: effects of lateral directed applied electric field including the core/shell sizes;The European Physical Journal Plus;2023-05-24
2. Analyzing the combined influences of external electric field, impurity-location, in-content, and QW’s number on donor-impurity binding energy in multiple quantum wells with finite squared potential;Optical and Quantum Electronics;2023-05-14
3. A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells;Physica Scripta;2023-03-29
4. The electric and magnetic field effects on the optical absorption in double QWs with squared, U-shaped and V-shaped confinement potentials;Philosophical Magazine;2022-11-19
5. Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells: temperature and electric field effects;Philosophical Magazine;2022-07-24
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