Origin of linear magnetoresistance in Bi2Te3 topological insulator: Role of surface state and defects-Reference-Cited by-同舟云学术

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Origin of linear magnetoresistance in Bi2Te3 topological insulator: Role of surface state and defects

Published:2024-04 Issue: Volume:679 Page:415801
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Rana Nabakumar,Singha Pintu^ORCID,Mukherjee Suchandra^ORCID,Das Subarna,Das Gangadhar,Deb Apurba Kanti,Chakravarty Sujay,Bandyopadhyay S.,Banerjee Aritra^ORCID

Funder

CSIR

UGC-DAE CSR

Publisher

Elsevier BV

Reference56 articles.

1. Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi 2 Te 3

2. Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tailoring thermoelectric performance of n-type Bi₂Te₃ through defect engineering and conduction band convergence;Journal of Physics: Condensed Matter;2024-06-12

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