Argon and oxygen pressure influence on the properties of NiO films deposited by magnetron sputtering in layer-by-layer growth regime-Reference-Cited by-同舟云学术

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Argon and oxygen pressure influence on the properties of NiO films deposited by magnetron sputtering in layer-by-layer growth regime

Published:2024-04 Issue: Volume:678 Page:415740
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Karpyna V.A.^ORCID,Ievtushenko A.I.^ORCID,Bykov O.I.^ORCID,Kolomys O.F.^ORCID,Strelchuk V.V.,Starik S.P.,Baturin V.A.,Karpenko O.Yu.,Lytvyn O.S.^ORCID

Publisher

Elsevier BV

Reference37 articles.

1. A review for nickel oxide hole transport layer and its application in halide perovskite solar cells;Cai;Materials Today Sustainability,2023

2. Electrical and optical properties of NiO films deposited by magnetron sputtering;Guziewicz;Opt. Appl.,2011

3. Anti-ferromagnetic contrast in NiO (001) studied with threshold photoemission electron microscopy;van Veghel;J. Magn. Magn Mater.,2007

4. Laser enhanced photo-catalytic removal of phenol from water using p-type NiO semiconductor catalyst;Gondal;J. Hazard Mater.,2008

5. Optimization parameters of NiO films by DC magnetron sputtering and improvement of electrochromic properties by a mixed electrolyte;Chen;Opt. Mater.,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-flexible, high-performing NAN transparent electrodes for bendable optoelectronic applications;Journal of Materials Science: Materials in Electronics;2024-09

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