On the effects of NBTI degradation in p-MOSFET devices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. A comprehensive model of PMOS NBTI degradation
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4. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evaluation of mirror full adder circuit reliability performance due to negative bias temperature instability (NBTI) effects based on different defect mechanisms;AIP Conference Proceedings;2017
2. New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability in p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors;Journal of Electronic Materials;2014-01-29
3. Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistors;Microelectronic Engineering;2013-09
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