Polarized emission and excitonic fine structure energies of InGaN quantum dots-Reference-Cited by-同舟云学术

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Polarized emission and excitonic fine structure energies of InGaN quantum dots

Published:2012-05 Issue:10 Volume:407 Page:1553-1555
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Karlsson K.F.,Amloy S.,Chen Y.T.,Chen K.H.,Hsu H.C.,Hsiao C.L.,Chen L.C.,Holtz P.O.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Formation of the charged exciton complexes in self-assembled InAs single quantum dots

2. Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot

3. A gallium nitride single-photon source operating at 200 K

4. Optical properties of photodetectors based on wurtzite quantum dot arrays

5. Fine structure of exciton complexes in high-symmetry quantum dots: Effects of symmetry breaking and symmetry elevation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization;Applied Physics Letters;2015-04-27

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