Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering-Reference-Cited by-同舟云学术

Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering

Published:2016-02 Issue: Volume:482 Page:43-50
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Nath Madhuchhanda,Roy Asim

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference49 articles.

1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's;Lo;IEEE Electron Device Lett.,1997

2. High-k gate dielectrics: current status and materials properties considerations;Wilk;J. Appl. Phys.,2001

3. J.H. Stathis, D.J. Di Maria, Reliability projection for ultra-thin oxides at low voltage, Technical Digest-International Electron Devices Meeting, 1998, pp. 167–170.

4. High-κ gate dielectric materials;Wallace;MRS Bull.,2002

5. High dielectric constant oxides;Robertson;Eur. Phys. J. Appl. Phys.,2004

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Processing of hafnium oxide thin films by 2 MeV Kr ion beam for opto-electronic applications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09

2. The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation;Materials;2024-07-13

3. Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films;Physica Scripta;2024-04-23

4. Dark Current Reduction and Performance Improvements in Graphene/Silicon Heterojunction Photodetectors Obtained Using a Non-Stoichiometric HfOx Thin Oxide Layer;Nanomaterials;2024-02-25

5. ALD deposited bipolar HfOx films for silicon surface passivation;Surfaces and Interfaces;2023-10