The effect of (PVP-Cu2Te) organic interlayer on the electrical parameters of Al/p-Si Schottky barrier diodes (SBDs) at room temperature-Reference-Cited by-同舟云学术

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The effect of (PVP-Cu2Te) organic interlayer on the electrical parameters of Al/p-Si Schottky barrier diodes (SBDs) at room temperature

Published:2021-03 Issue: Volume:604 Page:412732
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Marıl Elif

Funder

Gazi Üniversitesi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference55 articles.

1. Physics of Semiconductor Devices;Sze,2007

2. Identification of the frequency and voltage-dependent dielectric characterization of metal-Zn/PVA-Semiconductor structures;Tan,2019

3. Metal Semiconductor Contacts;Rhoderick,1988

4. The Al and n‐GaAs layers have been prepared by molecular beam epitaxy on an n+‐GaAs wafer;Ho;Phys. Lett.,1988

5. Comparative investigation on the effects of organic and inorganic interlayers in Au/n-GaAs Schottky diodes;Tan;IEEE Trans. Electron. Dev.,2017

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2. Dielectric properties of MS diodes with Ag:ZnO doped PVP interfacial layer depending on voltage and frequency;Materials Chemistry and Physics;2023-07

3. Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect;Journal of Inorganic and Organometallic Polymers and Materials;2023-02-06

4. Improvement of the electrical performance of Ag/MEH-PPV/SiNWs Schottky diode by the insertion of a thin layer of MEH-PPV polymer and study of the annealing effect;2022-12-15

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