Oxygen-vacancy-related high-temperature dielectric relaxation and electrical conduction in 0.95K0.5Na0.5NbO3–0.05BaZrO3 ceramic-Reference-Cited by-同舟云学术

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Oxygen-vacancy-related high-temperature dielectric relaxation and electrical conduction in 0.95K0.5Na0.5NbO3–0.05BaZrO3 ceramic

Published:2012-01 Issue:1 Volume:407 Page:136-139
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Liu Laijun,Huang Yanmin,Li Yunhua,Wu Meixie,Fang Liang,Hu Changzheng,Wang Yanzhong

Funder

Natural Science Foundation of Guangxi Province

Science and Technology Department of Guangxi Zhuang Autonomous

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Lattice constant of cubic perovskites

2. Oxygen-vacancy-related low-frequency dielectric relaxation and electrical conduction inBi:SrTiO3

3. Effect of annealing treatments on positive temperature coefficient of resistance properties of barium titanate ceramics and a new model for the positive temperature coefficient of resistance effect

4. Variable-range-hopping conduction and dielectric relaxation in disorderedSr0.97(Ti1−xFex)O3−δ

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