Rashba spin splitting in the Al0.3Ga0.7N/GaN heterostructure under uniaxial strain
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Spintronics: Fundamentals and applications
2. Anomalousk-dependent spin splitting in wurtziteAlxGa1−xN∕GaNheterostructures
3. Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1−xN∕GaN heterostructures under uniaxial strain
4. Spin splitting of conduction subbands in III-V heterostructures due to inversion asymmetry
5. Demonstration of Rashba spin splitting in GaN-based heterostructures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of conduction band nonprabolicity on the Rashba spin splitting of AlGaN/GaN QWs;Physica E: Low-dimensional Systems and Nanostructures;2017-09
2. Wave vector dependent Rashba coefficient and nonlinear Rashba spin splitting in AlGaN/GaN quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2014-08
3. Dependence of spin–orbit parameters in AlGaN/GaN quantum wells on the ratio of height between the left and right barrier;Physica B: Condensed Matter;2013-11
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