Identification of divacancies in 4H-SiC-Reference-Cited by-同舟云学术

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Identification of divacancies in 4H-SiC

Published:2006-04 Issue: Volume:376-377 Page:334-337
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Son N.T.,Umeda T.,Isoya J.,Gali A.,Bockstedte M.,Magnusson B.,Ellison A.,Morishita N.,Ohshima T.,Itoh H.,Janzén E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC

2. Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC

3. Defects in High-Purity Semi-Insulating SiC

4. Structure of the silicon vacancy in6H−SiCafter annealing identified as the carbon vacancy–carbon antisite pair

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Designing defect spins for wafer-scale quantum technologies;MRS Bulletin;2015-11-27

2. Electronic Defects in Electron-Irradiated Silicon Carbide and III-Nitrides;Applications of EPR in Radiation Research;2014

3. Formation and annealing behaviors of qubit centers in 4H-SiC from first principles;Journal of Applied Physics;2013-11-21

4. Room temperature coherent control of defect spin qubits in silicon carbide;Nature;2011-11

5. Defects in SiC;Defects in Microelectronic Materials and Devices;2008-11-19

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