Nonlinear infrared photoconductivity in Ge doped with As or Zn-Reference-Cited by-同舟云学术

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Nonlinear infrared photoconductivity in Ge doped with As or Zn

Published:2006-04 Issue: Volume:376-377 Page:220-223
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Nakata H.,Yokoyama A.,Tsubouchi N.,Fujii K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Infrared Photoconductivity due to Neutral Impurities in Germanium

2. Chapter 2 Impurity Germanium and Silicon Infrared Detectors

3. Laser Saturation of Photoconductivity and Determination of Imperfection Parameters in Sensitive Photoconductors

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1. Photoelectrical Spectroscopy;Spectroscopic Analysis of Optoelectronic Semiconductors;2016

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