1. Meindl: Short channel models and scaling limits of SOI and bulk MOSFETs;Agrawal;IEEE Journal of Solid-State Circuits,1994
2. Andrieu, F., Dupré, C., Rochette, F., Faynot, O., Tosti, L., Buj, C., Rouchouze, E., Cassé, M., Ghyselen, B., Cayrefourcq, I., Brévard, L., Allain, F., Barbé, J.C., Cluzel, J., Vandooren, A., Denorme, S., Ernst, T., Fenouillet-Béranger, C., Jahan, C., … Deleonibus, S. (2006). 25nm Short and narrow strained FDSOI with TiN/HfO2 gate stack. In Digest of technical papers—symposium on VLSI technology (pp. 134–135).
3. Breed, A., & Roenker, K.P. (2005). Comparison of the scaling characteristics of nanoscale silicon N-channel multiple-gate MOSFETS. In Midwest symposium on circuits and systems (Vol. 2005, pp. 603–606). .
4. Cao, K.M., Liu, W., Jin, X., Vasanth, K., Green, K., Krick, J., Vrotsos, T., & Hu, C. (1999). Modeling of pocket implanted MOSFETs for anomalous analog behavior. Technical Digest—International Electron Devices Meeting (pp. 171–174). IEEE.
5. Comparisons of microwave performance between single-gate and dual-gate MODFETs," in;Chen;IEEE Electron Device Letters,1988