1. The determination of the size and shape of silicon wafers is described in the following International SEMI Standards: SEMI MF533-0310, SEMI MF534-0707, SEMI MF1390-1014, SEMI MF1451-0707, SEMI MF1530-0707, (SEMI, 2014).
2. Resistivity-dopant density relationship for phosphorus-doped silicon;Thurber;J. Electrochem. Soc.,1980
3. Resistivity-dopant density relationship for boron-doped silicon;Thurber;J. Electrochem. Soc.,1980
4. Resistivity measurements, the conversion between resistivity and carrier concentration, and the determination of resistivity variations of silicon wafers are described in the following International SEMI standards: SEMI MF81-1105, SEMI MF84-0312, SEMI MF525-0312, SEMI MF1392-0307, SEMI MF1392-0307 (SEMI, 2014).
5. Semiconductor Material and Device Characterization;Schroder,2006