Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system-Reference-Cited by-同舟云学术

Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Published:2000-02 Issue:1-4 Volume:6 Page:297-300
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Dunford R.B,Griffin N,Pepper M,Phillips P.J,Whall T.E

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Scaling and the metal-insulator transition in Si/SiGe quantum wells

2. Metal-insulator transition atB=0inp-type SiGe

3. F.F. Fang, R.B. Dunford, R. Newbury, R.P Starrett, A.V. Skougarevsky, R.G. Clark, J.O. Chu, B.S. Meyerson, in: D. Heiman (Ed.), High Magnetic Fields in the Physics of Semiconductors, World Scientific, Singapore, 1995, p. 620.

4. Tuning of the quantum-Hall-effect-state–insulator transition by tilting of magnetic field

5. Magnetotransport anomalies in dilute two-dimensional electron systems: an experiment and a model

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