Electric and magnetic field fluctuations in modulation doped Si/Ge quantum wells-Reference-Cited by-同舟云学术

Electric and magnetic field fluctuations in modulation doped Si/Ge quantum wells

Published:2000-02 Issue:1-4 Volume:6 Page:218-221
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Jantsch W,Wilamowski Z,Sandersfeld N,Schäffler F

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Electron spin resonance on a two-dimensional electron gas

2. Spin exchange between a quantum well and the donor layer inSi/Si1−xCx

3. W. Jantsch, Z. Wilamowski, N. Sandersfeld, F. Schäffler, Proceedings of the International Conference on Physics of Semiconductors, Jerusalem 1998, in print.

4. ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells

5. Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures

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