InAs–GaAs self-assembled quantum dot lasers: physical processes and device characteristics-Reference-Cited by-同舟云学术

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InAs–GaAs self-assembled quantum dot lasers: physical processes and device characteristics

Published:2000-05 Issue:3-4 Volume:7 Page:489-493
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Mowbray D.J.,Harris L.,Fry P.W.,Ashmore A.D.,Parnell S.R.,Finley J.J.,Skolnick M.S.,Hopkinson M.,Hill G.,Clark J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Quantum Dot Heterostructures;Bimberg,1998

3. Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots

4. Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

5. Gain and Threshold of Quantum Dot Lasers: Theory and Comparison to Experiments

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropy effect on the nonlinear optical properties of a three-dimensional quantum dot confined at the center of a cylindrical nano-wire;Physica E: Low-dimensional Systems and Nanostructures;2014-05

2. Theoretical investigation of infrared generation mechanism by quantum coherence in low-dimensional semiconductor heterostructures;Acta Physica Sinica;2010

3. Lateral-cavity spectral hole burning in quantum-dot lasers;Applied Physics Letters;2002-08-26

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