Electronic transport properties of single-crystal silicon nanowires fabricated using an atomic force microscope

Author:

Clément N,Tonneau D,Dallaporta H,Bouchiat V,Fraboulet D,Mariole D,Gautier J,Safarov V

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Modification of hydrogen‐passivated silicon by a scanning tunneling microscope operating in air

2. D. Tonneau, N. Clément, A. Houel, N. Bonnail, H. Dallaporta, V. Safarov, Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-technologies, In: Y. Pauleau (Ed.), NATO ASI Series, Kluwer Academic, Dordrecht, in press.

3. Selective area oxidation of silicon with a scanning force microscope

4. Fabrication of silicon nanostructures with a scanning tunneling microscope

5. Fabrication of nanometer‐scale side‐gated silicon field effect transistors with an atomic force microscope

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