Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors-Reference-Cited by-同舟云学术

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Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors

Published:2003-04 Issue: Volume:17 Page:607-609
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Sceats Russell,Dyson Angela,J. Hepburn Carl,J. Potter Richard,Boland-Thoms Adrian,Balkan Naci,Hill Geoff,C. Button Chris,Pinches Steve

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Hot electron capture in GaAs MQW: NDR and persistent effects

2. Hot electron light emission from a GaInAsP/InP structure

3. Highly Efficient Light-Emitting Diodes with Microcavities

4. Operation of a novel hot-electron vertical-cavity surface-emitting laser

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel InGaN-based bidirectional wavelength converter and optical amplifier based on hot electron-induced blue light-emitting device;Journal of Luminescence;2024-08

2. A novel hot carrier-induced blue light-emitting device;Journal of Alloys and Compounds;2021-11

3. Growth characterization of InxGa1-xAs/AlxGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure;2008 IEEE International Conference on Semiconductor Electronics;2008-11

4. Low field operation of hot electron light emitting devices: quasi-flat-band model;IEE Proceedings - Optoelectronics;2004-12-01

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