Optical properties and carrier dynamics of InAs/InP(113)B quantum dots emitting between 1.3 and for laser applications-Reference-Cited by-同舟云学术

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Optical properties and carrier dynamics of InAs/InP(113)B quantum dots emitting between 1.3 and for laser applications

Published:2003-04 Issue: Volume:17 Page:56-59
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Miska P.,Even J.,Paranthoen C.,Dehaese O.,Folliot H.,Loualiche S.,Senes M.,Marie X.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. The present status of quantum dot lasers

2. How a quantum-dot laser turns on

3. Novel prospects for self-assembled InAs/GaAs quantum boxes

4. Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer

5. Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

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1. Semiconductor quantum dot lasers: Genesis, prospects, and challenges;Quantum Photonics;2024

2. Dielectric effect on the optical properties of exciton quantum dot with Gaussian plus generalized Hulthen potential as Pseudo-Harmonic potential;The European Physical Journal D;2021-01

3. Linear and nonlinear optical properties in spherical quantum dots: Manning-Rosen potential;Journal of Optics;2016-09-01

4. From Basic Physical Properties of InAs/InP Quantum Dots to State-of-the-Art Lasers for 1.55 µm Optical Communications;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17

5. Linear and Nonlinear Optical Properties in Spherical Quantum Dots: Generalized Hulthén Potential;Few-Body Systems;2016-05-05

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