Low-temperature resistance saturation in Si–δ-doped GaAs structure with Π-like gate electrode-Reference-Cited by-同舟云学术

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Low-temperature resistance saturation in Si–δ-doped GaAs structure with Π-like gate electrode

Published:2002-01 Issue:1-4 Volume:12 Page:634-636
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Levin M.,Lu Tie-Cheng L.,Shlimak I.,Ginodman V.,Resnick L.,Sandomirskii V.,Friedland K.-J.,Hey R.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference2 articles.

1. Suppression of the localization in the two-dimensional conductivity of Si-δ-doped GaAs by Mn co-doping

2. Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical conduction properties of Si δ-doped GaAs grown by MBE;Physica B: Condensed Matter;2009-11

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