MBE growth and properties of 3d transition metal-doped GaAs-Reference-Cited by-同舟云学术

MBE growth and properties of 3d transition metal-doped GaAs

Published:2001-05 Issue:1-3 Volume:10 Page:229-232
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Okazawa Daisuke,Yamamoto Kansyo,Nagashima Ayato,Yoshino Junji

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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4. Ferromagneticp-dexchange inZn1−xCrxSe diluted magnetic semiconductor

5. Magnetic susceptibility of iron-based semimagnetic semiconductors: High-temperature regime

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