Absorption magnitude and phase relaxation time in short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. For example, J. Faist, F. Cappaso, C. Sirtori, D.L. Sivco, A.L. Hutchinson, S.N.G Chu, A.Y. Cho, Appl. Phys. Lett. 63 (1993) 1354.
2. W.A. Beck, J.W. Little, A.C. Goldberg, T.S. Faska, Quantum Well Intersubband Transition Physics and Devices, Kluwer Academic Publishers, Dordrecht/Boston/London, 1994, p. 55.
3. All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells
4. Short wavelength intersubband transitions in InGaAs/AlGaAs quantum wells grown on GaAs
5. Feasibility of1.55 µmIntersubband Photonic Devices Using InGaAs/AlAs Pseudomorphic Quantum Well Structures
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