Optical properties of cubic GaN and (In,Ga)N
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
2. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy
3. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
4. Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties
5. Growth of zinc blende‐GaN on β‐SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free‐radical source
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1. Exploring the Next Phase in Gallium Nitride Photonics;Semiconductors and Semimetals;2017
2. Comparing LDA-1/2, HSE03, HSE06 andG0W0approaches for band gap calculations of alloys;Journal of Physics: Condensed Matter;2015-11-26
3. Bulk lattice parameter and band gap of cubic InXGa1−XN (001) alloys on MgO (100) substrates;Journal of Crystal Growth;2015-05
4. MATERIALS PROPERTIES OF NITRIDES: SUMMARY;International Journal of High Speed Electronics and Systems;2004-03
5. Band parameters for nitrogen-containing semiconductors;Journal of Applied Physics;2003-09-15
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