Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent Diodes
3. Electronic structure of GaP–AlP(100) superlattices
4. Short-Period Superlattices of (GaP)n(AlP)nGrown by Metalorganic Vapor Phase Epitaxy
5. Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices
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2. Quantum Dots of Gallium and Indium Arsenide Phosphides: Opto-electronic Properties, Spin Polarization and a Composition Effect of Quantum Confinement;Virtual Synthesis of Nanosystems by Design;2015
3. Control of the interband and intersubband transition energy in quantum wells using localized isoelectronic perturbations;Semiconductors;2002-04
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