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Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate

  • Published:1998-12 Issue:3-4 Volume:1 Page:237-241
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Agarwal Aditya,Fiory Anthony T.,Gossmann Hans-Joachim L.,Rafferty Conor S.,Frisella Peter

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. National technology roadmap for semiconductors. San Jose: Semiconductor Industry Association, 1997

2. Transient Phosphorus Diffusion Below the Amorphization Threshold

3. Simulation of cluster evaporation and transient enhanced diffusion in silicon

4. Gossmann H.-J. In: Huff, H.R., Goselle, U., Tsuya, H., editors. Semiconductor silicon. ECS Proc. 98(1), 1998. p. 884

5. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect

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2. Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

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