Electronic structure of GaAs1−xNx alloys
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
2. Electronic structure and phase stability ofGaAs1−xNxalloys
3. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP
4. Band gaps of GaPN and GaAsN alloys
5. Ab initiostudy of anomalous band-gap bowing in alloys
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Density functional study of electronic, elastic and optical properties of GaAs1−xNx (x=0, 0.25, 0.50, 0.75, 1) alloys;Computational Condensed Matter;2022-06
2. Ordering induced direct and indirect transitions in semiconductor alloys;Physical Review B;2006-11-09
3. Negative Band Gaps in DiluteInNxSb1−xAlloys;Physical Review Letters;2004-04-01
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