New challenges for 300mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding-Reference-Cited by-同舟云学术

New challenges for 300mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding

Published:2002-08 Issue:4-5 Volume:5 Page:425-428
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Dragoi V.,Lindner P.,Tischler M.,Schaefer C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference4 articles.

1. Stoger G, Shiraki SF. SEMI Micromachine/MEMS Seminar SEMICON 99, Kansai, Japan, June 1999.

2. Brubaker C, Glinsner T, Lindner P, Schaefer C, Tischler M. Proceedings of VIth International Symposium on Semiconductor Wafer Bonding: Science, Technology, Applications, Electrochemical Society, San Francisco, September 2–7, 2001, p. 25.

3. Dragoi V, Glinsner T, Lindner P, Schaefer C, Weixlberger J. International MEMS/MST Industry Forum, SEMICON Europe, April 2002, Munchen, Germany.

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