Organometallic precursors for the formation of GaN by MOCVD: the spectroscopic and gas-phase electron diffraction structural characterisation of Me3Ga·NHMe2 and [Me2Ga(μ-NMe2)]2
Author:
Publisher
Elsevier BV
Subject
Inorganic Chemistry,Organic Chemistry,Spectroscopy,Analytical Chemistry
Reference22 articles.
1. Organometallic precursors to the formation of GaN by MOCVD: structural characterisation of Me3Ga · NH3 by gas-phase electron diffraction
2. Organometallic precursors for the formation of GaN by metal-organic chemical vapour deposition: a study of [(CH3)2GaNH2]3
3. Single-Source III/V Precursors: A New Approach to Gallium Arsenide and Related Semiconductors
4. Adducts of trimethylgallium and perdeuteriotrimethylgallium with amine ligands and some dimethylgallium organyl pnictides (N, P, As). X-ray crystal structures of [Me3Ga·NH(C6H11)2] and [Me3Ga·HMe]
5. Primary amido and amine adduct complexes of gallium: synthesis and structures of [t-Bu2Ga(μ-NHPh)]2 and t-Bu3Ga·NH2Ph
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4. Gas electron diffraction study of the vapour over dimethylamine–gallane leading to an improved structure for dimeric dimethylamidogallane, [Me2NGaH2]2: a cautionary tale;Dalton Trans.;2006
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