Composition of the gas phase during deposition of SiC layers from reactive mixture CH3SiCl3+Ar+H2
Author:
Publisher
Elsevier BV
Subject
Inorganic Chemistry,Organic Chemistry,Spectroscopy,Analytical Chemistry
Reference10 articles.
1. Transition product model of the CVD process
2. The growth of hetero-epitaxial SiC films by pyrolysis of various alkyl-silicon compounds
3. Inelastic light scattering studies of silicon chemical vapor deposition (CVD) systems
4. Mechanisms of chemical vapor deposition of silicon
5. Mechanism of chemical vapor deposition of silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Role of H2 and Ar as the diluent gas in continuous hot-wire CVD synthesis of SiC fiber;Journal of the European Ceramic Society;2022-07
2. Modeling of the elementary gas‐phase reaction during chemical vapor deposition of silicon carbide from CH 3 SiCl 3 /H 2;International Journal of Chemical Kinetics;2020-03-23
3. Effect of H2 dilution gas on the growth of ZrC during low pressure chemical vapor deposition in the ZrCl4–CH4–Ar system;Surface and Coatings Technology;2008-10
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