1. Will HBTs be the next compound semiconductor sucess story;Meyer;Compound Semiconductors, Cover Story to the 50th anniversary of transistors,1997
2. Reliability investigation of InGaP/GaAs heterojunction bipolar transistors;Bahl;IEEE Electron Device Letters,1996
3. Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBT's under bias and temperature stress;Kurishima;IEEE Electron Device Letters,1998
4. High reliability InGaP/GaAs HBT;Pan;IEEE Electron Device Letters,1998
5. M. Achouche, S. Kraus, T. Spitzbart, M. Rudolph, P. Kurpas, D. Rentner, F. Brunner, E. Richter, T. Bergunde, P. Heymann, P. Wolter, H. Wittrich, M. Weyers, J. Wuerfel, G. Traenkle: “InGaP/GaAs power HBTs for L-band applications”, Proceedings of the 26th International Symposium on Compound Semiconductors, A2.2, Berlin, Germany, 22–26 August 1999