Junction area dependence of tunneling magnetoresistance
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. SPIN-TUNNELING IN FERROMAGNETIC JUNCTIONS
2. Proper oxidation for spin-dependent tunnel junctions
3. Ion beam deposition and oxidation of spin-dependent tunnel junctions
4. Spin-dependent tunneling junctions with Fe55Ni45 electrodes and in situ resistive measurement of oxide growth
5. Large tunneling magnetoresistance enhancement by thermal anneal
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1. High bias voltage dependence in tunneling magnetoresistance of a ramp-type junction;Journal of Applied Physics;2003-05-15
2. Broad distribution effects in sums of lognormal random variables;The European Physical Journal B - Condensed Matter;2003-04-01
3. Statistical properties of currents flowing through tunnel junctions;Journal of Magnetism and Magnetic Materials;2003-03
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