Switching characteristics of spin valve devices designed for MRAM applications
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Spin-valve RAM cell
2. Micromagnetics of spin valve memory cells
3. X. Che, US Patent No. 5,546,253, 1996.
4. Micromagnetic simulations of magnetoresistive behavior of sub-micrometer spin-valve MRAM devices
5. The effect of end and edge shape on the performance of pseudo-spin valve memories
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