Magnetoresistive oxides: new developments and applications-Reference-Cited by-同舟云学术

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Magnetoresistive oxides: new developments and applications

Published:2002-04 Issue: Volume:242-245 Page:98-104
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Fontcuberta J.,Balcells Ll.,Bibes M.,Navarro J.,Frontera C.,Santiso J.,Fraxedas J.,Martı́nez B.,Nadolski S.,Wojcik M.,Jedryka E.,Casanove M.J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Low-field colossal magnetoresistance in manganite tunnel spin valves

2. Very large magnetoresistance and coherent switching in half-metallic manganite tunnel junctions

3. Influence of a 36.8° grain boundary on the magnetoresistance of La0.8Sr0.2MnO3−δ single crystal films

4. Large low-field magnetoresistance in La0.7Ca0.3MnO3 induced by artificial grain boundaries

5. Lattice Effects on the Magnetoresistance in Doped LaMnO3

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