Capacitance study of defects induced in heavily damaged region formed in hydrogen implanted Si-Reference-Cited by-同舟云学术

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Capacitance study of defects induced in heavily damaged region formed in hydrogen implanted Si

Published:2003-09 Issue:1-3 Volume:102 Page:233-237
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kaniewska M.,Antonova I.V.,Popov V.P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. Unusual features in trap emission characteristics of heavily damaged silicon induced by MeV ion implantation

2. Electrical characterization of MeV heavy-ion-induced damage in silicon: Evidence for defect migration and clustering

3. Electrical studies on H-implanted silicon

4. Doping Profiles by MOSFET Deep Depletion C(V)

5. Silicon Impurity Distribution as Revealed by Pulsed MOS C-V Measurements

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unusual properties of C-T characteristics of hydrogen implanted and annealed Si;The European Physical Journal Applied Physics;2004-07

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