Author:
Glaser E.R,Carlos W.E,Braga G.C.B,Freitas J.A,Moore W.J,Shanabrook B.V,Wickenden A.E,Koleske D.D,Henry R.L,Bayerl M.W,Brandt M.S,Obloh H,Kozodoy P,DenBaars S.P,Mishra U.K,Nakamura S,Haus E,Speck J.S,Van Nostrand J.E,Sanchez M.A,Calleja E,Ptak A.J,Myers T.H,Molnar R.J
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference56 articles.
1. For a review, see W.E. Carlos, in: J.H. Edgar, Toby Strite, I. Akasaki, H. Amano (Eds.), Properties of GaN, INSPEC, London, 1999, pp. 104–114.
2. For a review, see B.K. Meyer, in: Semiconductors and Semimetals, vol. 57 1999, pp. 371–406.
3. Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance
4. Magnetic resonance studies of InGaN-based quantum well diodes
5. On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire
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