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Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature

  • Published:2000-01 Issue: Volume:69-70 Page:401-405
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Kim H.B.,Son J.H.,Chae K.H.,Jeong J.Y.,Lee W.S.,Im S.,Song J.H.,Whang C.N.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluence evolution of defects in α-SiO2 determined by ionoluminescence;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-10

2. Second-order nonlinear optical behavior of amorphous SiOxthin films grown by sputtering;Journal of Physics D: Applied Physics;2015-09-04

3. The defect-related photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 films;Applied Surface Science;2004-06

4. Visible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-02

5. Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation;Journal of Applied Physics;2002-03
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