Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors

Published:1999-12 Issue:1-3 Volume:66 Page:162-173
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Richter E.,Brunner F.,Gramlich S.,Hähle S.,Mai M.,Zeimer U.,Weyers M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Compound Semiconductors, May/June 1997.

2. Current trends in heterojunction bipolar transistors;Liu,1996

3. Laboratory notes on electrical and galvanomagnetic measurements;Wieder,1979

4. HEMTs and HBTS;Das,1991

5. Auger recombination in intrinsic GaAs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-destructive characterization of heterointerfaces by depth-resolved cathodoluminescence and its application to InGaP/GaAs interface;Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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