Characterization of the surfaces of hydrogen-passivated silicon by STM
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Band bending and the apparent barrier height in scanning tunneling microscopy
2. Tunneling mechanisms in electrochemical STM —distance and voltage tunneling spectroscopy
3. Scanning tunneling microscopy of hydrogenated amorphous silicon: high-resolution topography and local apparent barrier heights
4. Imaging cos(s, z): A method to separate the geometric and compositional contributions on STM barrier height profiles
5. AFM and STM investigations of hydrogenated amorphous silicon: topography and barrier heights
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1. Tunneling through arbitrary potential barriers and the apparent barrier height;American Journal of Physics;2002-11
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