Vacancy-hydrogen complexes in germanium-Reference-Cited by-同舟云学术

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Vacancy-hydrogen complexes in germanium

Published:1999-02 Issue:1-2 Volume:58 Page:36-38
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Coomer B.J.,Leary P.,Budde M.,Bech Nielsen B.,Jones R.,Öberg S.,Briddon P.R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

2. Electronic structure of hydrogen-vacancy complexes in crystalline silicon: A theoretical study

3. P. Stallinga, P. Johannesen, S. Herstrom, K. Bonde Nielsen, B.B. Nielsen, Phys. Rev. B (1998), in press.

4. The nature of several intense Si-H infrared stretching peaks in the neutron-transmutation-doped Si-H system

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1. The Origin of Defects Induced in Ultra-Pure Germanium by Electron Beam Deposition;Quodons in Mica;2015

2. Unexpected properties of the inductively coupled plasma induced defect in germanium;Physica B: Condensed Matter;2014-04

3. Role of ion mass on damage accumulation during ion implantation in Ge;physica status solidi (a);2013-11-29

4. Effect of local electron-electron correlation in hydrogen-like impurities in Ge;Physical Review B;2013-05-15

5. Germanium and Silicon: A Comparative Study of Hydrogenated Interstitial and Vacancy Defects by IR Spectroscopy;Electrochemical and Solid-State Letters;2010

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