Cathodoluminescence study of the effect of annealing in HgI2 vapor on the defect structure of CdTe

Author:

Panin G.,Piqueras J.,Sochinskii N.V.,Dieguez E.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Properties of Narrow Gap Cadmium-based Compounds;Capper,1994

2. Structural defects in high resistivity cadmium telluride

3. Evolution of Transport Properties along a Semi-Insulating CdTe Crystal Grown by Vertical Gradient Freeze Method

4. Properties of Narrow Gap Cadmium-base Compounds,1994

5. Properties of Narrow Gap Cadmium-based Compounds;Clark,1994

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Hg1−xCdxI2/CdTe-based heterostructures as a new high Z material for radiation detectors: VPE growth of micro-pixel arrays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-07

2. Cathodoluminescence study of laser recrystallized CdTe layers;Applied Physics Letters;1997-11-24

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