Monte carlo simulation of the EBIC grain boundary contrast in semiconductors-Reference-Cited by-同舟云学术

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Monte carlo simulation of the EBIC grain boundary contrast in semiconductors

Published:1996-12 Issue:1-3 Volume:42 Page:181-184
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Tabet N.,Ledra M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Polycrystalline Semiconductors II;Pasemann,1991

2. Ebic contrast of defects in cadmium telluride. II. Theory

3. Structure and Property Relationships for Interfaces;Tabet,1991

4. Light‐beam‐induced current characterization of grain boundaries

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1. Effects of a linear arrangement of embedded Ge nanocrystals on an electron beam induced current;Micro and Nanostructures;2022-06

2. Simulated Contrast of Two Dislocations;Semiconductors;2019-04

3. Monte-Carlo simulation of nano-collected current from a silicon sample containing a linear arrangement of uncapped nanocrystals;Journal of Applied Physics;2015-09-21

4. Three-dimensional simulation of electron beam induced current collected by a nano-contact: Diffusion and collection analysis;Journal of Applied Physics;2011-12-15

5. Monte Carlo simulation of the EBIC collection efficiency of a Schottky nanocontact;Superlattices and Microstructures;2009-04

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