GaN-based high-power laser diodes-Reference-Cited by-同舟云学术

GaN-based high-power laser diodes

Published:2001-05 Issue:1-3 Volume:82 Page:248-252
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Miyajima Takao,Yoshida Hiroshi,Yanashima Katsunori,Yamaguchi Takashi,Asatsuma Tsunenori,Funato Kenji,Hashimoto Shigeki,Nakajima Hiroshi,Ozawa Masafumi,Kobayashi Toshimasa,Tomiya Shigetaka,Asano Takeharu,Uchida Shiro,Kijima Satoru,Tojyo Tsuyoshi,Hino Tomonori,Ikeda Masao

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

3. T. Miyajima, M. Ozawa, T. Asatsuma, H. Kawai, M. Ikeda, Proc. of 2nd Int. Conf. on Nitride Semicond. (ICNS'97) Tokushima, 1997, p. 82.; J. Cryst. Growth 189/190 (1998) 768.

4. Epitaxial Lateral Overgrowth of GaAs by LPE

5. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

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