Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

Published:2000-08 Issue:1 Volume:77 Page:24-26
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zhaochun Zhang,Xiaoyan Qin,Deliang Cui,Xianggui Kong,Baibiao Huang,Minhua Jiang

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Organometallic Vapor-Phase Epitaxy, Theory and Practice;Stringfellow,1989

2. The preparation of device quality gallium phosphide by metal organic chemical vapor deposition

3. Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer

4. Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs1-xPxand InGa1-xPxas Top Cell Material

5. Backscattering Spectrometry;Chu,1978

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells;Journal of Applied Physics;2013-04-07

2. Growth of AlxGa1−xP on GaAs substrate by metalorganic vapor phase epitaxy;Materials Science and Engineering: B;2001-09

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