Applications of defect engineering in InP-based structures-Reference-Cited by-同舟云学术

Applications of defect engineering in InP-based structures

Published:2000-06 Issue:2-3 Volume:75 Page:103-109
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Chen W.M,Buyanova I.A,Tu C.W

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. G.L. Witt, R. Calawa, U. Mishra, E. Weber (Eds.), Low Temperature (LT) GaAs and Related Materials, MRS Symposium Proceedings, Vol. 241, Materials Research Society, Pittsburgh, PA, 1992.

2. Electrical properties of InP grown by gas‐source molecular beam epitaxy at low temperature

3. Phosphorus antisite defects in low-temperature InP

4. Origin ofn‐type conductivity of low‐temperature grown InP

5. Optically detected magnetic resonance studies of low-temperature InP

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1. Defects in undoped semi-insulating InP;SPIE Proceedings;2014-02-21

2. Understanding defects in semiconductors as key to advancing device technology;Physica B: Condensed Matter;2003-12

3. Characterization of point defects in semi-insulating InP:Fe by high-resolution photoinduced transient spectroscopy;SPIE Proceedings;2003-10-21

4. Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layer;Semiconductor Science and Technology;2003-07-01

5. Furthering the understanding of quantum well intermixing in InP;2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)