Ligand field treatment for the electronic levels of Cr2+ ion in II–VI compound of ZnS
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference38 articles.
1. Multiplet Structures of Transition Metal Deep Impurities in ZnS
2. First-principles calculations of multiplet structures of transition metal deep impurities in II–VI and III–V semiconductors
3. Open-Shell Self-Consistent-Field Molecular-Orbital Theory for Transition-Metal Clusters
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Zero-field splitting parameters and local structures for tetragonal Cr 2+ centers in Cr 2+ -doped ZnSe semiconductors;Chinese Physics B;2014-11
2. Theoretical investigations of substitution site and local structure distortion for tetragonal Cr2+ ion in AgGaSe2:Cr2+ compound;Materials Science and Engineering: B;2014-04
3. Diffusion of chromium and impurity absorption in ZnS crystals;Functional Materials;2013-03-25
4. Spin-Hamiltonian parameters and lattice distortions around 3d n impurities;Optical Properties of 3d-Ions in Crystals: Spectroscopy and Crystal Field Analysis;2013
5. Local lattice structure and spin singlet contribution to zero-field splitting of ZnS:Cr2+;Acta Physica Sinica;2011
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