Electron induced dissociation of hydrogen or deuterium–silicon complexes in GaAs; application to the reliability of GaAs based electronic or optoelectronic devices-Reference-Cited by-同舟云学术

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Electron induced dissociation of hydrogen or deuterium–silicon complexes in GaAs; application to the reliability of GaAs based electronic or optoelectronic devices

Published:2001-03 Issue:1-3 Volume:80 Page:270-273
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Silvestre S.,Bernard D.,Mezière S.,Constant E.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Diffusion and electronic states of hydrogen inn-type GaAs andn-typeGa1−xAlxAs

2. Donor neutralization in GaAs(Si) by atomic hydrogen

3. Thermal stability of dopant‐hydrogen pairs in GaAs

4. Negatively charged state of atomic hydrogen inn-type GaAs

5. Isotope effect on the reactivation of neutralized Si dopants in hydrogenated or deuterated GaAs: The role of hot electrons

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron-beam-induced dissociation of (B,D) complexes in diamond mediated by multiple vibrational excitations;Physical Review B;2010-01-26

2. Stability of B–H and B–D complexes in diamond under electron beam excitation;Applied Physics Letters;2008-08-11

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